PhD and Postdoctoral positions
From Semiconductor Spectroscopy and Devices
Open PhD positions
The group has advertised studentships in the areas of
- Nanoscale characterisation of nitride semiconductors (Prof. Martin)
- Development of novel direct electron imaging detectors for structural characterisation of materials (Dr. Trager-Cowan)
- Optical and electron-beam investigations of AlInN semiconductors and their applications (Dr. Trager-Cowan)
- Understanding the imaging of defects in the scanning electron microscope (Dr. Hourahine)
About our group
The Strathclyde team combines a wide range of theoretical and experimental techniques to determine the physical and optical morphologies of optoelectronic materials and has a strong track record in the characterisation of nitrides, II-IV materials and chalcogenides. The Main Page of our group has more details on our research at Strathclyde; see here for more details about studying at Strathclyde University.
We measure spatially and spectrally resolved photo (PL)–and cathodoluminescence (CL), time-resolved luminescence, depth resolved luminescence, temperature dependent luminescence, absorption and photoluminescence excitation spectra (PLE). The optical measurements complement compositional and structural analysis by energy and wavelength dispersive X-ray (WDX) spectroscopy in an electron probe microanalyser (EPMA) (uniquely integrated with a CL spectroscopy system) or electron backscatter diffraction (EBSD) and electron channelling contrast imaging (ECCI) in a scanning electron microscope. Raman spectroscopy has recently been added to the group's portfolio of techniques. Access to the UK Synchrotron Radiation Source at Daresbury Laboratory has enabled the team to develop expertise in extended X-ray absorption fine structure (EXAFS) above the In K-edge of InGaN layers, providing a unique probe of local structure on an atomic length scale.
In-house semi-empirical and ab initio theory of the structural and optical properties of nitride based materials and dilute alloys have provided valuable insight into our experimental results. The major simulation techniques in the group are based on density functional theory, coupled with large scale parallel computing. This has led to joint experimental and theoretical investigations into composition, structure and luminescence properties of materials. We feel this combined approach is fundamental to the understanding of InN and related alloys and the ability to develop device quality material.
The Strathclyde team has demonstrated excellent training for early-stage researchers with 9 students completing postgraduate studies in the last 5 years. Students from Ireland, Luxembourg, Portugal, France, Spain, Germany, Estonia and Russia, Zambia, Nigeria and Saudi Arabia have all carried out research in our laboratories. We also deliver postgraduate training courses entitled “Post Graduate Topics in Physics of Semiconductors” and “Optical Design”. See our Main Page for more details of our group.
The department of Physics is situated in the heart of the cosmopolitan and vibrant city of Glasgow, with surrounding restaurants, parks, clubs and pubs, not to mention great shopping facilities – second only in the UK to London. Glasgow is also home to the new Science Centre, many museums and galleries and a number of theatres and cinemas. European City of Culture in 1990 and European City of Architecture in 1999 only highlights Glasgow’s ability to cater for the many different cultures and tastes which exist in the city. The friendly and hospitable nature of Glaswegians combined with the culturally diverse and energetic city makes Glasgow the place to be. See here for more details about studying in Strathclyde.