@Article{strathprints60196,
author = {S. Vespucci and G. Naresh-Kumar and C. Trager-Cowan and K. P. Mingard and D. Maneuski and V. O'Shea and A. Winkelmann},
title = {Diffractive triangulation of radiative point sources},
journal = {Applied Physics Letters},
year = {2017},
volume = {110},
number = {12},
pages = {124103},
month = {March},
abstract = {We describe a general method to determine the location of a point source of waves relative to a two-dimensional single-crystalline active pixel detector. Based on the inherent structural sensitivity of crystalline sensor materials, characteristic detector diffraction patterns can be used to triangulate the location of a wave emitter. The principle described here can be applied to various types of waves provided that the detector elements are suitably structured. As a prototypical practical application of the general detection principle, a digital hybrid pixel detector is used to localize a source of electrons for Kikuchi diffraction pattern measurements in the scanning electron microscope. This approach provides a promising alternative method to calibrate Kikuchi patterns for accurate measurements of microstructural crystal orientations, strains, and phase distributions.},
keywords = {instrumentation, pixel detector, crystalline sensor materials, Physics, Physics and Astronomy (miscellaneous), Radiation},
url = {http://strathprints.strath.ac.uk/60196/}
}

@Article{strathprints59555,
author = {S. Vespucci and A. Winkelmann and K. Mingard and D. Maneuski and V. O'Shea and C. Trager-Cowan},
title = {Exploring transmission {K}ikuchi diffraction using a {T}imepix detector},
journal = {Journal of Instrumentation},
year = {2017},
volume = {12},
number = {2},
pages = {C02075},
month = {February},
abstract = {Electron backscatter diffraction (EBSD) is a well-established scanning electron microscope (SEM)-based technique [1]. It allows the non-destructive mapping of the crystal structure, texture, crystal phase and strain with a spatial resolution of tens of nanometers. Conventionally this is performed by placing an electron sensitive screen, typically consisting of a phosphor screen combined with a charge coupled device (CCD) camera, in front of a specimen, usually tilted 70? to the normal of the exciting electron beam. Recently, a number of authors have shown that a significant increase in spatial resolution is achievable when Kikuchi diffraction patterns are acquired in transmission geometry; that is when diffraction patterns are generated by electrons transmitted through an electron-transparent, usually thinned, specimen. The resolution of this technique, called transmission Kikuchi diffraction (TKD), has been demonstrated to be better than 10 nm [2, 3]. We have recently demonstrated the advantages of a direct electron detector, Timepix [4, 5], for the acquisition of standard EBSD patterns [5]. In this article we will discuss the advantages of Timepix to perform TKD and for acquiring spot diffraction patterns and more generally for acquiring scanning transmission electron microscopy micrographs in the SEM. Particularly relevant for TKD, is its very compact size, which allows much more flexibility in the positioning of the detector in the SEM chamber. We will furthermore show recent results using Timepix as a virtual forward scatter detector, and will illustrate the information derivable on producing images through processing of data acquired from different areas of the detector. We will show results from samples ranging from gold nanoparticles to nitride semiconductor nanorods.},
keywords = {radiation, imaging detectors, electron backscatter diffraction, Kikuchi diffraction patterns, transmission Kikuchi diffraction, direct electron detector, Timepix, scanning transmission electron microscopy micrographs, Physics, Instrumentation, Mathematical Physics},
url = {http://strathprints.strath.ac.uk/59555/}
}

@Article{strathprints54220,
author = {S. Vespucci and A. Winkelmann and G. Naresh-Kumar and K. P. Mingard and D. Maneuski and P. R. Edwards and A. P. Day and V. O'Shea and C. Trager-Cowan},
title = {Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns},
journal = {Physical Review B (Condensed Matter)},
year = {2015},
volume = {92},
number = {20},
pages = {205301},
month = {November},
abstract = {Electron backscatter diffraction is a scanning electron microscopy technique used to obtain crystallographic information on materials. It allows the nondestructive mapping of crystal structure, texture, and strain with a lateral and depth resolution on the order of tens of nanometers. Electron backscatter diffraction patterns (EBSPs) are presently acquired using a detector comprising a scintillator coupled to a digital camera, and the crystallographic information obtainable is limited by the conversion of electrons to photons and then back to electrons again. In this article we will report the direct acquisition of energy-filtered EBSPs using a digital complementary metal-oxide-semiconductor hybrid pixel detector, Timepix. We show results from a range of samples with different mass and density, namely diamond, silicon, and GaN. Direct electron detection allows the acquisition of EBSPs at lower ({$\leq$}5 keV) electron beam energies. This results in a reduction in the depth and lateral extension of the volume of the specimen contributing to the pattern and will lead to a significant improvement in lateral and depth resolution. Direct electron detection together with energy filtering (electrons having energy below a specific value are excluded) also leads to an improvement in spatial resolution but in addition provides an unprecedented increase in the detail in the acquired EBSPs. An increase in contrast and higher-order diffraction features are observed. In addition, excess-deficiency effects appear to be suppressed on energy filtering. This allows the fundamental physics of pattern formation to be interrogated and will enable a change in the use of electron backscatter diffraction (EBSD) for crystal phase identification and the mapping of strain. The enhancement in the contrast in high-pass energy-filtered EBSD patterns is found to be stronger for lighter, less dense materials. The improved contrast for such materials will enable the application of the EBSD technique to be expanded to materials for which conventional EBSD analysis is not presently practicable.},
keywords = {electron backscatter diffraction patterns, EBSPs, electron detection, energy filtering, Physics, Condensed Matter Physics},
url = {http://strathprints.strath.ac.uk/54220/}
}

@Article{strathprints49409,
author = {C. Trager-Cowan and G. Naresh-Kumar and N. Allehiani and S. Kraeusel and B. Hourahine and S. Vespucci and D. Thomson and J. Bruckbauer and G. Kusch and P. R. Edwards and R. W. Martin and C. Mauder and A. P. Day and A. Winkelmann and A. Vilalta-Clemente and A. J. Wilkinson and P. J. Parbrook and M. J. Kappers and M. A. Moram and R. A. Oliver and C. J. Humphreys and P. Shields and E. D. Le Boulbar and D. Maneuski and V. O'Shea and K. P. Mingard},
title = {Electron channeling contrast imaging of defects in {III}-nitride semiconductors},
journal = {Microscopy and Microanalysis},
year = {2014},
volume = {20},
number = {S3},
pages = {1024--1025},
month = {August},
keywords = {Physics, Instrumentation},
url = {http://strathprints.strath.ac.uk/49409/}
}

@Article{strathprints37508,
author = {E Fretwurst and J Adey and A Al-Ajili and G Alfieri and PP Allport and M Artuso and S Assouak and BS Avset and L Barabashi and A Barcz and R Bates and SF Biagi and GM Bilei and D Bisello and A Blue and A Blumenau and V Boisvert and G Bolla and G Bondarenko and E Borchi and L Borrello and D Bortoletto and M Boscardin and L Bosisio and TJV Bowcock and TJ Brodbeck and J Broz and M Bruzzi and A Brzozowski and M Buda and P Buhmann and C Buttar and F Campabadal and D Campbell and A Candelori and G Casse and A Cavallini and S Charron and A Chilingarov and D Chren and V Cindro and P Collins and R Coluccia and D Contarato and J Coutinho and D Creanza and L Cunningham and GF Dalla Betta and I Dawson and W de Boer and M De Palma and R Demina and P Dervan and S Dittongo and Z Dolezal and A Dolgolenko and T Eberlein and V Eremin and C Fall and F Fasolo and T Ferbel and F Fizzotti and C Fleta and E Focardi and E Forton and C Garcia and JE Garcia-Navarro and E Gaubas and MH Genest and KA Gill and K Giolo and M Glaser and C Goessling and V Golovine and SG Sevilla and I Gorelov and J Goss and AG Bates and G Gregoire and P Gregori and E Grigoriev and AA Grillo and A Groza and J Guskov and L Haddad and J Harkonen and F Hauler and M Hoeferkamp and F Honniger and T Horazdovsky and R Horisberger and M Horn and A Houdayer and Benjamin Hourahine and G Hughes and I Ilyashenko and K Irmscher and A Ivanov and K Jarasiunas and KMH Johansen and BK Jones and R Jones and C Joram and L Jungermann and E Kalinina and P Kaminski and A Karpenko and A Karpov and V Kazlauskiene and V Kazukauskas and V Khivrich and V Khomenkov and J Kierstead and J Klaiber-Lodewigs and R Klingenberg and P Kodys and Z Kohout and S Korjenevski and M Koski and R Kozlowski and M Kozodaev and G Kramberger and O Krasel and A Kuznetsov and S Kwan and S Lagomarsino and K Lassila-Perini and V Lastovetsky and G Latino and I Lazanu and S Lazanu and A Lebedev and C Lebel and K Leinonen and C Leroy and Z Li and G Lindstrom and V Linhart and P Litovchenko and A Litovchenko and AL Giudice and M Lozano and Z Luczynski and P Luukka and A Macchiolo and LF Makarenko and I Mandic and C Manfredotti and N Manna and SM Garcia and S Marunko and K Mathieson and J Melone and D Menichelli and A Messineo and J Metcalfe and S Miglio and M Mikuz and J Miyamoto and M Moll and E Monakhov and F Moscatelli and D Naoumov and E Nossarzewska-Orlowska and J Nysten and P Olivero and V Oshea and T Palviainen and C Paolini and C Parkes and D Pesseri and U Pein and G Pellegrini and L Perera and M Petasecca and C Plemonte and GU Pignatel and N Pinho and I Pintilie and L Pintilie and L Polivtsev and P Polozov and A Popa and J Popule and S Pospisil and A Pozza and V Radicci and JM Rafi and R Rando and R Roeder and T Rohe and S Ronchin and C Rott and A Roy and A Ruzin and HFW Sadrozinski and S Sakalauskas and M Scaringella and L Schiavulli and S Schnetzer and B Schumm and S Sciortino and A Scorzoni and G Segneri and S Seidel and A Seiden and G Sellberg and P Sellin and D Sentenac and I Shipsey and P Sicho and T Sloan and M Solar and S Son and B Sopko and V Sopko and N Spencer and J Stahl and D Stolze and R Stone and J Storasta and N Strokan and M Sudzius and B Surma and A Suvorov and BG Svensson and P Tipton and M Tomasek and A Tsvetkov and E Tuominen and E Tuovinen and T Tuuva and M Tylchin and H Uebersee and J Uher and M Ullan and JV Vaitkus and J Velthuis and E Verbitskaya and V Vrba and G Wagner and I Wilhelm and S Worm and V Wright and R Wunstorf and Y Yiuri and P Zabierowski and A Zaluzhny and M Zavrtanik and M Zen and V Zhukov and N Zorzi and Benjamin Hourahine},
journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
title = {Recent advancements in the development of radiation hard semiconductor detectors for S-LHC},
year = {2005},
month = {October},
note = {5th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, ITALY, OCT 10-13, 2004},
number = {1-2},
pages = {7--19},
volume = {552},
abstract = {The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration ?Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders? has started in 2002 an R\&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.},
keywords = {optics, photonics, semiconductor detectors, radiation, Optics. Light, Instrumentation, Nuclear and High Energy Physics},
url = {http://strathprints.strath.ac.uk/37508/},
}

@Article{strathprints37547,
author = {M Moll and J Adey and A Al-Ajili and G Alfieri and PP Allport and M Artuso and S Assouak and BS Avset and L Barabash and A Barcz and R Bates and SF Biagi and GM Bilei and D Bisello and A Blue and A Blumenau and V Boisvert and G Bolla and G Bondarenko and E Borchi and L Borrello and D Bortoletto and M Boscardin and L Bosisio and TJV Bowcock and TJ Brodbeck and J Broz and M Bruzzi and A Brzozowski and M Buda and P Buhmann and C Buttar and F Campabadal and D Campbell and A Candelori and G Casse and A Cavallini and S Charron and A Chilingarov and D Chren and V Cindro and P Collins and R Coluccia and D Contarato and J Coutinho and D Creanza and W Cunningham and GF Dalla Betta and I Dawson and W de Boer and M De Palma and R Demina and P Dervan and S Dittongo and Z Dolezal and A Dolgolenko and T Eberlein and V Eremin and C Fall and F Fasolo and F Fizzotti and C Fleta and E Focardi and E Forton and E Fretwurst and C Garcia and JE Garcia-Navarro and E Gaubas and MH Genest and KA Gill and K Giolo and M Glaser and C Goessling and V Golovine and SG Sevilla and I Gorelov and J Goss and AG Bates and G Gregoire and P Gregori and E Grigoriev and AA Grillo and A Groza and J Guskov and L Haddad and J Harkonen and F Hauler and M Hoeferkamp and F Honniger and T Horazdovsky and R Horisberger and M Horn and A Houdayer and Benjamin Hourahine and G Hughes and I Ilyashenko and K Irmscher and A Ivanov and K Jarasiunas and KMH Johansen and BK Jones and R Jones and C Joram and L Jungermann and E Kalinina and P Kaminski and A Karpenko and A Karpov and V Kazlauskiene and V Kazukauskas and V Khivrich and V Khomenkov and J Kierstead and J Klaiber-Lodewigs and R Klingenberga and P Kodys and Z Kohout and S Korjenevski and M Koski and R Kozlowski and M Kozodaev and G Kramberger and O Krasel and A Kuznetsov and S Kwan and S Lagomarsino and K Lassila-Perini and V Lastovetsky and G Latino and S Lazanu and I Lazanu and A Lebedev and C Lebel and K Leinonen and C Leroy and Z Li and G Lindstrom and V Linhart and A Litovchenko and P Litovchenko and A Lo Giudice and M Lozano and Z Luczynski and P Luukka and A Macchiolo and LF Makarenko and I Mandic and C Manfredotti and N Manna and S marti garcia and S Marunko and K Mathieson and J Melone and D Menichelli and A Messineo and J Metcalfe and S Miglio and M Mikuz and J Miyamoto and E Monakhov and F Moscatelli and D Naoumov and E Nossarzewska-Orlowska and J Nysten and P Olivera and V OShea and T Palvialnen and C Paolini and C Parkes and D Passeri and U Pein and G Pellegrini and L Perera and K Petasecca and C Piemonte and GU Pignatel and N Pinho and I Pintilie and L Pintilie and L Polivtsev and P Polozov and A Popa and J Popule and S Pospisil and A Pozza and V Radicci and JM Rafi and R Rando and R Roeder and T Rohe and S Ronchin and C Rott and A Roy and A Ruzin and HFW Sadrozinski and S Sakalauskas and M Scaringella and L Schiavulli and S Schnetzer and B Schumm and S Sciortino and A Scorzoni and G Segneri and S Seidel and A Seiden and G Sellberg and P Sellin and D Sentenac and I Shipsey and P Sicho and T Sloan and M Solar and S Son and B Sopko and V Sopko and N Spencer and J Stahl and D Stolze and R Stone and J Storasta and N Strokan and M Sudzius and B Surma and A Suvorov and BG Svensson and P Tipton and M Tomasek and A Tsvetkov and E Tuominen and E Tuovinen and T Tuuva and M Tylchin and H Uebersee and J Uher and M Ullan and JV Vaitkus and J Velthuis and E Verbitskaya and V Vrba and G Wagner and I Wilhelm and S Worm and V Wright and R Wunstorf and Y Yiuri and P Zabierowski and A Zaluzhny and M Zavrtanik and M Zen and V Zhukov and N Zorzi and Benjamin Hourahine},
journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
title = {Development of radiation tolerant semiconductor detectors for the Super-LHC},
year = {2005},
month = {July},
note = {6th International Workshop on Radiation Imaging Detectors, Univ Glasgow, Glasgow, SCOTLAND, JUL 25-29, 2004},
number = {1-2},
pages = {99--107},
volume = {546},
abstract = {The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 1035 cm?2 s?1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R\&D program. The CERN RD50 collaboration ?Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders? is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented.},
keywords = {radiation, semiconductor detectors, SuperLHC, Therapeutics. Pharmacology, Instrumentation, Nuclear and High Energy Physics},
url = {http://strathprints.strath.ac.uk/37547/},
}

@Article{strathprints37499,
author = {M Bruzzi and J Adey and A Al-Ajili and P Alexandrov and G Alfieri and PP Allport and A Andreazza and M Artuso and S Assouak and BS Avset and L Barabash and E Baranova and A Barcz and A Basile and R Bates and N Belova and SF Biagi and GM Bilei and D Bisello and A Blue and B Blumenau and V Boisvert and G Bolla and G Bondarenko and E Borchi and L Borrello and D Bortoletto and M Boscardin and L Bosisio and TJV Bowcock and TJ Brodbeck and J Broz and A Brukhanov and A Brzozowski and M Buda and P Buhmann and C Buttar and F Campabadal and D Campbell and A Candelori and G Casse and A Cavallini and A Chilingarov and D Chren and V Cindro and M Citterio and P Collins and R Coluccia and D Contarato and J Coutinho and D Creanza and W Cunningham and V Cvetkov and GF Dalla Betta and G Davies and I Dawson and W de Boer and M De Palma and R Demina and P Dervan and A Dierlamm and S Dittongo and L Dobrzanski and Z Dolezal and A Dolgolenko and T Eberlein and V Eremin and C Fall and F Fasolo and T Ferbel and F Fizzotti and C Fleta and E Focardi and E Forton and S Franchenko and E Fretwurst and F Gamaz and C Garcia and JE Garcia-Navarro and E Gaubas and MH Genest and KA Gill and K Giolo and M Glaser and C Goessling and V Golovine and SG Sevilla and I Gorelov and J Goss and A Gouldwell and G Gregoire and P Gregori and E Grigoriev and C Grigson and A Grillo and A Groza and J Guskov and L Haddad and J Harkonen and R Harding and F Hauler and S Hayama and M Hoeferkamp and F Honniger and T Horazdovsky and R Horisberger and M Horn and A Houdayer and Benjamin Hourahine and A Hruban and G Hughes and I Ilyashenko and K Irmscher and A Ivanov and K Jarasiunas and T Jin and BK Jones and R Jones and C Joram and L Jungermann and E Kalinina and P Kaminski and A Karpenko and A Karpov and V Kazlauskiene and V Kazukauskas and V Khivrich and V Khomenkov and J Kierstead and J Klaiber-Lodewigs and M Kleverman and R Klingenberg and P Kodys and Z Kohout and S Korjenevski and A Kowalik and R Kozlowski and M Kozodaev and G Kramberger and O Krasel and A Kuznetsov and S Kwan and S Lagomarsino and T Lari and K Lassila-Perini and V Lastovetsky and G Latino and S Latushkin and S Lazanu and I Lazanu and C Lebel and K Leinonen and C Leroy and Z Li and G Lindstrom and L Lindstrom and V Linhart and A Litovchenko and P Litovchenko and V Litvinov and A Lo Giudice and M Lozano and Z Luczynski and P Luukka and A Macchiolo and A Mainwood and LF Makarenko and I Mandic and C Manfredotti and SM Garcia and S Marunko and K Mathieson and A Mozzanti and J Melone and D Menichelli and C Meroni and A Messineo and S Miglio and M Mikuz and J Miyamoto and M Moll and E Monakhov and F Moscatelli and L Murin and F Nava and D Naoumov and E Nossarzewska-Orlowska and S Nummela and J Nysten and P Olivero and V Oshea and T Palviainen and C Paolini and C Parkes and D Passeri and U Pein and G Pellegrini and L Perera and M Petasecca and B Piatkowski and C Piemonte and GU Pignatel and N Pinho and I Pintilie and L Pintilie and L Polivtsev and P Polozov and AI Popa and J Popule and S Pospisil and G Pucker and V Radicci and JM Rafi and F Ragusa and M Rahman and R Rando and R Roeder and T Rohe and S Ronchin and C Rott and P Roy and A Roy and A Ruzin and A Ryazanov and HFW Sadrozinski and S Sakalauskas and M Scaringella and L Schiavulli and S Schnetzer and B Schumm and S Sciortino and A Scorzoni and G Segneri and S Seidel and A Seiden and G Sellberg and P Sellin and D Sentenac and I Shipsey and P Sicho and T Sloan and M Solar and S Son and B Sopko and N Spencer and J Stahl and I Stavitski and D Stolze and R Stone and J Storasta and N Strokan and W Strupinski and M Sudzius and B Surma and J Suuronen and A Suvorov and BG Svensson and P Tipton and M Tomasek and C Troncon and A Tsvetkov and E Tuominen and E Tuovinen and T Tuuva and M Tylchin and H Uebersee and J Uher and M Ullan and JV Vaitkus and P Vanni and J Velthuis and G Verzellesi and E Verbitskaya and V Vrba and G Wagner and I Wilhelm and S Worm and V Wright and R Wunstorf and P Zablerowski and A Zaluzhny and M Zavrtanik and M Zen and V Zhukov and N Zorzi and Benjamin Hourahine},
journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
title = {Radiation-hard semiconductor detectors for SuperLHC},
year = {2005},
month = {April},
note = {5th International Symposium on Development and Application of Semiconductor Tracking Detectors, Hiroshima, JAPAN, JUN 14-17, 2004},
number = {1-2},
pages = {189--201},
volume = {541},
abstract = {An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm?2 s?1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm?2. The CERN-RD50 project ?Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders? has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.},
keywords = {semiconductor detectors, SuperLHC, radiation, Therapeutics. Pharmacology, Instrumentation, Nuclear and High Energy Physics},
url = {http://strathprints.strath.ac.uk/37499/},
}