@Article{strathprints53732,
author = {Nils A.K. Kaufmann and L. Lahourcade and B. Hourahine and D. Martin and N. Grandjean},
title = {Critical impact of {E}hrlich-{S}chw{\"o}bel barrier on {GaN} surface morphology during homoepitaxial growth},
journal = {Journal of Crystal Growth},
year = {2016},
volume = {433},
pages = {36--42},
month = {January},
abstract = {We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schw{\"o}bel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which strongly affect the surface roughness. We present an in-depth study of this phenomenon on GaN homoepitaxial layers grown by metal organic vapor phase epitaxy and molecular beam epitaxy. We show how a proper tuning of the growth parameters allows for the control of the surface morphology, independent of the growth technique.},
keywords = {growth models, metalorganic chemical vapor deposition, molecular beam epitaxy, nitrides, semiconducting gallium compounds, surface structure, Physics, Electronic, Optical and Magnetic Materials, Surfaces and Interfaces},
url = {http://strathprints.strath.ac.uk/53732/}
}

@article{strathprints48001,
volume = {250},
number = {4},
month = {April},
author = {Agata Kaminska and Piotr Nowakowski and Grzegorz Staszczak and Tadeusz Suski and Andrzej Suchocki and Jean Fran{\c c}ois Carlin and Nicolas Grandjean and Robert Martin and Akio Yamamoto},
title = {Peculiarities in the pressure dependence of photoluminescence in InAlN},
journal = {Physica Status Solidi B},
pages = {677--682},
year = {2013},
keywords = {high-pressure spectroscopy, photoluminescence, pressure coefficients, ternary nitride alloys, InAlN, Physics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials},
url = {http://strathprints.strath.ac.uk/48001/},
abstract = {Studies of ambient-pressure and high-pressure behavior of photoluminescence (PL) for series of InxAl1-xN layers are presented. The measured evolution of PL energy (EPL) with x is characterized by a clear decrease of EPL and exhibits a strong bowing. This dependence corresponds to the predictions of ab initio calculations of the band-gap energy changes EG with x. However, values of EPL are clearly lower than EG, for 0{\ensuremath{<}}x{\ensuremath{<}}0.3. For higher x, the measured EPL follows well the calculated EG. The experimentally determined pressure coefficient of PL energy (dEPL/dp) shows a complicated behavior for alloys with different In-content. We found a strong reduction of dEPL/dp for 0{\ensuremath{<}}x{\ensuremath{<}}0.3 and a relatively constant magnitude of this coefficient for higher x. Moreover, for the lower x region, we observed dEPL/dp that can differ even by a factor two in samples with nominally very similar In-content. The general tendency in dEPL/dp evolution with x corresponds to lower values than calculated dEG/dp for alloys with non-uniform indium distribution. We propose two not necessary independent explanations of these experimental findings. First, due to non-uniform In distribution (induced, e.g. by defects or non-homogeneous strain) both EPL and dEPL/dp are reduced. Second, a similar behavior results from an involvement of the localized states, whose formation and contribution to PL can be induced by strain and/or native defects. In both hypotheses, the strain/defect density can significantly change around x{$\approx$}0.18 where InxAl1-xN layers are lattice matched to GaN template. {\copyright} 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.}
}

@Article{strathprints38541,
author = {K.P. O'Donnell and R.W. Martin and M.E. White and M.J. Tobin and J.F.W. Mosselmans and I.M. Watson and B. Damiliano and N. Grandjean},
journal = {MRS Online Proceedings Library},
title = {Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation},
year = {2001},
pages = {G9.11},
volume = {639},
abstract = {The Daresbury synchrotron radiation source (SRS) provides bright, tunable x-rays for scattering and absorption probes of local structure. Scanning confocal microscopy and luminescence decay measurements employ the SRS in alternative ways, as a tunable luminescence excitation engine and as a source of weak, 160 ps pulses with a large pulse-topulse separation, respectively. This report first describes local atomic structure studies of InGaN epilayers by extended x-ray absorption fine structure (EXAFS). In addition, we report photoluminescence (PL) imaging, PL microspectroscopy and photoluminescence decay studies of various nitride samples, including tailored InGaN quantum wells and discs.},
keywords = {InGaN epilayer, quantum well, quantum dot samples, synchrotron radiation, Physics, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics},
url = {http://strathprints.strath.ac.uk/38541/},
}