@Article{strathprints59864,
author = {Z. Li and L. Wang and L. Jiu and J. Bruckbauer and Y. Gong and Y. Zhang and J. Bai and R. W. Martin and T. Wang},
title = {Optical investigation of semi-polar (11-22) {AlₓGa₁₋ₓN} with high {Al} composition},
journal = {Applied Physics Letters},
year = {2017},
volume = {110},
number = {9},
pages = {091102},
month = {February},
abstract = {Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.},
keywords = {exciton localization, uniform population inversion, threshold current, lasing, aluminium, ultra violet laser diodes, photoluminescence, temperature dependence, near-band-edge emission, basal-plane stacking faults, Physics, Physics and Astronomy(all)},
url = {http://strathprints.strath.ac.uk/59864/}
}

@Article{strathprints44537,
author = {Jochen Bruckbauer and Paul R Edwards and Jie Bai and Tao Wang and Robert W Martin},
title = {Probing light emission from quantum wells within a single nanorod},
journal = {Nanotechnology},
year = {2013},
volume = {24},
number = {36},
pages = {365704},
month = {August},
abstract = {Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.},
keywords = {probing light emission, quantum wells, single nanorod, Physics, Physics and Astronomy(all)},
url = {http://strathprints.strath.ac.uk/44537/}
}

@article{strathprints42421,
volume = {18},
number = {6},
month = {December},
author = {Paul R. Edwards and Lethy Krishnan Jagadamma and Jochen Bruckbauer and Chaowang Liu and Philip Shields and Duncan Allsopp and Tao Wang and Robert W. Martin},
title = {High-resolution cathodoluminescence hyperspectral imaging of nitride nanostructures},
journal = {Microscopy and Microanalysis},
pages = {1212--1219},
year = {2012},
keywords = {cathodoluminescence, hyperspectral imaging, gallium nitride, principal component analysis, multivariate statistical analysis, SEM, Physics, Instrumentation},
url = {http://strathprints.strath.ac.uk/42421/},
abstract = {Hyperspectral cathodoluminescence imaging provides spectrally and spatially resolved information on luminescent materials within a single dataset. Pushing the technique toward its ultimate nanoscale spatial limit, while at the same time spectrally dispersing the collected light before detection, increases the challenge of generating low-noise images. This article describes aspects of the instrumentation, and in particular data treatment methods, which address this problem. The methods are demonstrated by applying them to the analysis of nanoscale defect features and fabricated nanostructures in III-nitride-based materials.}
}

@Article{strathprints30547,
author = {Jochen Bruckbauer and Paul R. Edwards and Tao Wang and Robert W. Martin},
title = {High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures},
journal = {Applied Physics Letters},
year = {2011},
volume = {98},
number = {14},
pages = {141908},
month = {April},
abstract = {InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trenchlike features and V-pits on the surface of the MQWs are investigated. The MQW emission from the region inside trenchlike features is redshifted by approximately 45 meV and more intense than the surrounding planar regions of the sample, whereas emission from the V-pits is blueshifted by about 20 meV and relatively weaker. By employing this technique to the studied nanostructures it is possible to investigate energy and intensity shifts on a 10 nm length scale.},
keywords = {cathodoluminescence, gallium compounds, III-V semiconductors, indium compounds, MOCVD, nanofabrication, nanostructured materials, red shift, semiconductor growth, semiconductor quantum wells, wide band gap semiconductors, Physics, Physics and Astronomy (miscellaneous)},
url = {http://strathprints.strath.ac.uk/30547/}
}