Post-doctoral positions

Post-doc: Scanning electron microscopy modelling and data analysis
Working Hours Full-time
Salary Range: £31,076 (fixed due to funding)
FTE: 1.0
Term: Fixed (until December 2020)
Closing Date: 15 January 2018

The Semiconductor Spectroscopy and Devices group in the Department is looking to appoint a Research Associate to conduct and supervise computational research into simulating and analysing electron diffraction in scanning electron microscopes. Based on the REF 2014 GPA Scores, Times Higher Education ranked Strathclyde as number one in the UK for Physics research.

To be considered for the role, you will hold a PhD (or equivalent professional experience) in a relevant discipline associated with physical or computational science. You will have extensive knowledge in at least one of the areas of simulating electron microscopy images, computational modelling of materials or machine learning. You will also have applied practical experience in the development, conduct and troubleshooting of computational tools.

You will have a developing ability to conduct individual research work, to disseminate results and to prepare research proposals. You will have an ability to plan and organise your own workload effectively and an ability to work within a combined theoretical and experimental team environment. You will have excellent interpersonal and communication skills, with the ability to listen, engage and persuade, and to present complex information in an accessible way to a range of audiences.

For informal enquiries, please contact Dr Benjamin Hourahine, at or on +44 (0)141 548 2325.

Application details are online here, the application process is here. Interviews for the post will be held in February 2018.

Posted 20th December 2017

PhD studentships

PhD studentships: Nanoanalysis of semiconductors and devices built from III-nitrides
There is potentially funding available for UK or EU students to carry out PhDs in our research group. For additional information please contact Professor Robert Martin, Dr Carol Trager-Cowan or Dr Ben Hourahine.

We investigate technologically important GaN-based semiconductor materials. Such materials underpin highly successful and growing technologies, such as LED lighting and power transistors, and also have great potential in developing technologies, such as UV emitters and solar energy converters, but deeper understanding of the materials is needed to ensure progress. We use advanced and developing scanning electron microscope based techniques such as electron channelling contrast imaging, cathodoluminescence and electron beam induced conductivity, to analyse the structural, optical and electrical properties of state-of-the-art III-nitride semiconductor structures down to the nanometer scale. The experimental data acquired is combined via software tools developed in the group to provide as much information as possible on the material and on the performance that can be delivered in subsequent devices. Experiments are guided and data interpreted through use of theoretical simulations and machine vision tools. New instrument development involving collaboration with academic and industrial partners is further expanding our materials’ characterisation capabilities. The GaN-based structures are provided from epitaxy specialists at collaborating groups at the Universities of Cambridge, Sheffield, Bath, Cork and Nottingham and from industry.

We welcome applications from potential PhD students interested in participating in research as described above.

Posted 20th April 2017