Nanoanalysis of semiconductors and devices built from III-nitrides
There is potentially funding available for UK or EU students to carry out PhDs in our research group. For additional information please contact Professor Robert Martin, Dr Carol Trager-Cowan or Dr Ben Hourahine.

We investigate technologically important GaN-based semiconductor materials. Such materials underpin highly successful and growing technologies, such as LED lighting and power transistors, and also have great potential in developing technologies, such as UV emitters and solar energy converters, but deeper understanding of the materials is needed to ensure progress. We use advanced and developing scanning electron microscope based techniques such as electron channelling contrast imaging, cathodoluminescence and electron beam induced conductivity, to analyse the structural, optical and electrical properties of state-of-the-art III-nitride semiconductor structures down to the nanometer scale. The experimental data acquired is combined via software tools developed in the group to provide as much information as possible on the material and on the performance that can be delivered in subsequent devices. Experiments are guided and data interpreted through use of theoretical simulations and machine vision tools. New instrument development involving collaboration with academic and industrial partners is further expanding our materials’ characterisation capabilities. The GaN-based structures are provided from epitaxy specialists at collaborating groups at the Universities of Cambridge, Sheffield, Bath, Cork and Nottingham and from industry.

We welcome applications from potential PhD students interested in participating in research as described above.

Posted 20th April 2017