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From Semiconductor Spectroscopy and Devices
Semiconductor Spectroscopy and Devices research group
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The Semiconductor Spectroscopy and Devices research group is part of the Nanoscience division of the Department of Physics at the University of Strathclyde. The Department is a member of the Scottish Universities Physics Alliance (SUPA).
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9th International Conference on Nitride Semiconductors was held in Glasgow, 10–15 July 2011. See icns9.org for more details.
Research interests
- semiconductor materials issues, including:-
- Group III nitrides: AlN, GaN, InN and their alloys AlxGayIn1-x-yN
- Materials doped with rare earth ions such as Eu3+, Er2+ and Tb3+
- Chalcopyrites: Cu(In,Ga)(S,Se)2
- spatially and spectrally resolved luminescence characterisation, including:-
- photoluminescence
- cathodoluminescence
- electroluminescence
- electron backscatter diffraction and electron channeling contrast imaging
- optical properties of plasmonic nanostructures
- first principles and semi-empirical modelling
Recent publications
- NEW K.J.Lethy, P.R.Edwards, C.Liu, W.N.Wang and R.W.Martin (2012) Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array, Journal of Applied Physics 112 023507 doi:10.1063/1.4737418
- NEW K.J.Lethy, P.R.Edwards, C.Liu, P.A.Shields, D.W.E.Allsopp and R.W.Martin (2012) Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE, Semiconductor Science and Technology 27 085010 doi:10.1088/0268-1242/27/8/085010
- NEW F.Luckert, M.V.Yakushev, C.Faugeras, A.V.Karotki, A.V.Mudryi and R.W.Martin (2012) Excitation power and temperature dependence of excitons in CuInSe2, Journal of Applied Physics 111 093507 doi:10.1063/1.4709448
- NEW G. Naresh-Kumar, B. Hourahine, P.R.Edwards, A. P. Day, A. Winkelmann, A. J. Wilkinson, P. J. Parbrook, G. England, and C. Trager-Cowan (2012) Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope, Physical Review Letters 108 135503 doi:10.1103/PhysRevLett.108.135503
- J.Bruckbauer, P.R.Edwards, T.Wang and R.W.Martin (2011) High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures, Applied Physics Letters 98 141908 doi:10.1063/1.3575573
- P.R.Edwards, D. Sleith, A. W. Wark and R.W.Martin (2011) Mapping localized surface plasmons within silver nanocubes using cathodoluminescence hyperspectral imaging, Journal of Physical Chemistry C 115 14031–14035 doi:10.1063/1.3575573
- P.R.Edwards and R.W.Martin (2011) Cathodoluminescence nanocharacterization of semiconductors, Semiconductor Science and Technology 26 064005 doi:10.1088/0268-1242/26/6/064005
- F.Luckert, D.I.Hamilton, M.V.Yakushev, N.S.Beattie, G.Zoppi, M.Moynihan, I.Forbes, A.V.Karotki, A.V.Mudryi, M.Grossberg, J.Krustok and R.W.Martin (2011) Optical properties of high quality Cu2ZnSnSe4 thin films, Applied Physics Letters 99 062104 doi:10.1063/1.3624827
- V.Kachkanov, I.P.Dolbnya, K.P.O'Donnell, R.W.Martin, P.R.Edwards and S.Pereira (2011) InGaN epilayer characterization by microfocused x-ray reciprocal space mapping, Applied Physics Express 99 181909 doi:10.1063/1.3658619









