The Semiconductor Spectroscopy and Devices research group is part of the Nanoscience division of the Department of Physics at the University of Strathclyde. The Department is a member of the Scottish Universities Physics Alliance (SUPA).

Research interests

Group news

Join us! Jobs / PhD studentships available
Latest publications
A complete list of our papers can be found here.

  • [doi] A. K. Singh, K. P. O’Donnell, P. R. Edwards, K. Lorenz, J. H. Leach, and M. Boćkowski, “Eu-Mg defects and donor-acceptor pairs in GaN : photodissociation and the excitation transfer problem,” Journal of Physics D: Applied Physics, vol. 51, p. 65106, 2018.
  • [doi] P. R. Edwards, G. Naresh-Kumar, G. Kusch, J. Bruckbauer, L. Spasevski, C. G. Brasser, M. J. Wallace, C. Trager-Cowan, and R. W. Martin, “You do what in your microprobe?! The EPMA as a multimode platform for nitride semiconductor characterization,” Microscopy and Microanalysis, vol. 24, iss. S1, p. 2026–2027, 2018.
  • [doi] P. M. Coulon, G. Kusch, P. Fletcher, P. Chausse, R. W. Martin, and P. A. Shields, “Hybrid top-down/bottom-up fabrication of a highly uniform and organized faceted AlN nanorod scaffold,” Materials, vol. 11, iss. 7, 2018.
  • [doi] M. Katsikini, V. Katchkanov, P. Boulet, P. R. Edwards, K. P. O’Donnell, and V. Brien, “Extended X-ray absorption fine structure study of Er bonding in AlNO:Erₓ films with x≤ 3.6%,” Journal of Applied Physics, 2018.
  • [doi] G. Naresh-Kumar, D. Thomson, Y. Zhang, J. Bai, L. Jiu, X. Yu, Y. P. Gong, R. S. Martin, T. Wang, and C. Trager-Cowan, “Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging,” Journal of Applied Physics, 2018.