Machine learning investigation of GaN dislocations in an unsupervised focus
Summer project by Albes Kotzai, 2018

Wide bandgap AlGaN semiconductors: doping and polarity
Presented by Lucia Spasevski at 13th Multinational Congress on Microscopy 2017, Rovinj, Croatia

Non-destructive imaging of extended defects in III-nitride thin film structures using electron channelling contrast imaging
Presented by Naresh Kumar at Microscopy and Microanalysis 2017, St Louis, USA

Mapping anti-phase domains by polarity sensitive orientation imaging using electron backscatter diffraction
Presented by Naresh Kumar at Microscopy and Microanalysis 2017, St Louis, USA

Spatial clustering of point defects in Si doped wide bandgap AlGaN
Presented by Gunnar Kusch at International Conference on Defects in Semiconductors (ICDS-29) 2017, Matsue, Japan

Dynamics of the V_N negative U center
Presented by Ben Hourahine at International Conference on Defects in Semiconductors (ICDS-29) 2017, Matsue, Japan

Modelling electron channeling contrast for threading dislocations in nitride semiconductors
Presented by Elena Pascal at International Conference on Defects in Semiconductors (ICDS-29) 2017, Matsue, Japan

Photochromic switching of Eu-Mg defects in GaN(Mg):Eu
Presented by Paul Edwards at International Conference on Nitride Semiconductors (ICNS-12) 2017, Strasbourg, France

Optical and structural properties of semipolar GaN on patterned Si substrates
Presented by Jochen Bruckbauer at International Conference on Nitride Semiconductors (ICNS-12) 2017, Strasbourg, France

Structural and optical characterisation of coreshell InGaN/GaN microtubes emitting in the green spectral range
Presented by Gunnar Kusch at International Conference on Nitride Semiconductors (ICNS-12) 2017, Strasbourg, France

Dynamical simulations of transmission Kikuchi diffraction patterns
Presented by Elena Pascal at EBSD 2017, Oxford, UK

Renormalization group studies of the thermodynamics and kinetics of Ising models
Presented by James Denholm at SUPA Annual Gathering, 2017, Edinburgh, UK

Theoretical model of contrast produced by surface normal TDs as observed by ECCI
Presented by Elena Pascal at EBSD 2016, Manchester, UK

Hyperspectral cathodoluminescence imaging of semi-polar (11-22) GaN
Presented by Carol Trager-Cowan at International Workshop on Nitride Semiconductors (IWN) 2016, Orlando, USA

Hybrid white inorganic/organic LEDs using organic colour converters
Presented by Jochen Bruckbauer at International Workshop on Nitride Semiconductors (IWN) 2016, Orlando, USA

Optical properties of semipolar (11-22) AlGaN on GaN microrod templates
Presented by Jochen Bruckbauer at International Workshop on Nitride Semiconductors (IWN) 2016, Orlando, USA

Quantitative microstructural analysis of nitride thin films in the scanning electron microscope
Presented by Nouf Allehiani at XXIV International Materials Research Congress (IMRC) 2015, Cancun, Mexico

Direct electron imaging of energy filtered EBSD patterns using a CMOS hybrid pixel detector
Presented by Stefano Vespucci at 17th International Workshop on Radiation Imaging Detectors (iWoRiD) 2015, Hamburg, Germany

Investigation of the structural and electrical properties of Al_0.2Ga_0.8N/GaN high electron mobility transistor structures cooled under N₂ and H₂ carrier gases
Presented by Carol Trager-Cowan at UK Semiconductors conference 2015, Sheffield, UK

Hyperspectral cathodoluminescence imaging of low resistivity large bandgap AlGaN layers
Presented by Gunnar Kusch at International Workshop on Nitride Semiconductors (IWN) 2014, Wroclaw, Poland

Investigation of hybrid white inorganic/organic LEDs using a novel organic compound for colour conversion
Presented by Jochen Bruckbauer at International Workshop on Nitride Semiconductors (IWN) 2014, Wroclaw, Poland

Structural and Optical Properties of Ga auto-incorporated InAlN epilayers
Presented by Elaine Taylor at International Workshop on Nitride Semiconductors (IWN) 2014, Wroclaw, Poland

Mapping of the strain and distribution of dislocations in InAlN based HEMTs using EBSD and ECCI
Presented by Naresh Kumar at International Workshop on Nitride Semiconductors (IWN) 2014, Wroclaw, Poland

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for HEMTs
Presented by Naresh Kumar at International Workshop on Nitride Semiconductors (IWN) 2014, Wroclaw, Poland

White light emission from InGaN/GaN LEDs and nanorods using a novel organic compound for colour conversion
Presented by Jochen Bruckbauer at International Conference on Nitride Semiconductors (ICNS-10) 2013, Washington DC, USA

Hyperspectral cathodoluminescence imaging of InAlN/AlGaN quantum well/quantum barrier-structures
Presented by Gunnar Kusch at International Conference on Nitride Semiconductors (ICNS-10) 2013, Washington DC, USA

Coincident cathodoluminescence and electron channelling contrast imaging of threading dislocations in GaN
Presented by Jochen Bruckbauer at International Conference on Nitride Semiconductors (ICNS-10) 2013, Washington DC, USA

Simultaneous mapping of the cathodoluminescence and electron beam induced current from InGaN LEDs with different barrier growth temperatures
Presented by Michael Wallace at International Conference on Nitride Semiconductors (ICNS-10) 2013, Washington DC, USA

Photoluminescence mapping of InGaN/GaN quantum well samples and LEDs
Presented by Elaine Taylor, 2013

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC
Presented by Carol Trager-Cowan at Launch Event for EPSRC Centre for Power Electronics, 2013, Nottingham, UK

Electroluminescence studies of InGaN blue LEDs
Presented by Michael Wallace at SUPA Annual Meeting, 2012

Cathodoluminescence spectroscopy of InGaN LEDs under applied bias
Presented by Michael Wallace at UK Semiconductors 2012, Sheffield, UK

Applications of ECCI for characterising nitride semiconductor thin films in a scanning electron microscope
Presented by Naresh Kumar at UK Semiconductors 2012, Sheffield, UK

Trench defects and threading dislocations in III-nitride structures investigated using scanning electron microscopy
Presented by Jochen Bruckbauer at International Workshop on Nitride Semiconductors (IWN) 2012, Sapporo, Japan

Cathodoluminescence spectroscopy of InGaN LEDs under applied bias
Presented by Michael Wallace at 9th International Symposium on Semiconductor Light Emitting Devices (ISSLED) 2012, Berlin, Germany

Cathodo- and photoluminescence studies of nanorods with embedded InGaN/GaN disks
Presented by Jochen Bruckbauer at International Conference on Nitride Semiconductors (ICNS-9) 2011, Glasgow, UK

Light emission from site-controlled GaN quantum dots
Presented by Paul Edwards at SUPA Launch Event 2005, Edinburgh, UK